Ropla Elektronik Sp. z o.o. | Lager

MOS, FET Transistors

Unipolar & BipolarTransistors

Resultate pro Seite Positionen 201 bis 225 aus 257 < 1 2 3 4 5 6 7 8 9 10 11 >

Herstellerkennzeichnung Hersteller Index Ropla		Info	Lagervorrat	Nettopreis	MOQ Multiple
201	AKSMMUN5233DW Akyga semi	Dual Bias Resistor Transistors N-Ch. 50V/100mA 256mW	0 pcs on stock	0,1771200 PLN	3000 3000
201	AKS1090	Gehäuse: SOT-363 Temperatur: -50/+150°C	0 pcs on stock	0,1771200 PLN	3000 3000
202	2N7002KW Akyga semi	N-Channel Mosfet Transistor 60V/340mA; 200mW	+ 0 pcs 80 pcs on stock from 2024-10-11	0,0645000 PLN	3000 3000
202	AKS1102	Gehäuse: SOT-323 Temperatur: -55/+150°C	+ 0 pcs 80 pcs on stock from 2024-10-11	0,0645000 PLN	3000 3000
203	MTA025P01SN3-0-T1-G Cystech Electronics Corp.	P-MOSFET Transistor 14V/5,2A 1.4W	0 pcs on stock by special order	0,3071500 PLN	3000 3000
203	CST0001	Gehäuse: SOT-23 Temperatur: -55/+150°C	0 pcs on stock by special order	0,3071500 PLN	3000 3000
204	30026 DIV	Tranzystor power, Bosh	pcs on stock by special order		1 0
204	DIV0572	Gehäuse: TO-218 Temperatur: N/A	pcs on stock by special order		1 0
205	2SK135 Hitachi	Silicon N-Channel MOS FET	0 pcs on stock by special order		1 0
205	HIT0001	Gehäuse: TO-3 Temperatur: -55/+150°C	0 pcs on stock by special order		1 0
206	HY8N50T HY Electronic	N-Channel Enhancement Mode MOSFET 500V/8A; 125W	0 pcs on stock by special order von der Produktion zurückgezogen	2,0178200 PLN	1000 2000
206	HYE0569	Gehäuse: TO-220AB Temperatur: -55/+150°C		2,0178200 PLN	1000 2000
207	HY8N50FT HY Electronic	N-Channel Enhancement Mode MOSFET 500V/8A; 45W	0 pcs on stock by special order von der Produktion zurückgezogen	2,2420300 PLN	1000 2000
207	HYE0570	Gehäuse: TO-220FP Temperatur: -55/+150°C		2,2420300 PLN	1000 2000
208	HY10N65T HY Electronic	N-Channel Enhancement Mode MOSFET 650V/10A; 156W	0 pcs on stock by special order von der Produktion zurückgezogen	2,6278600 PLN	1000 2000
208	HYE0571	Gehäuse: TO-220AB Temperatur: -55/+150°C		2,6278600 PLN	1000 2000
209	HY12N65T HY Electronic	N-Channel Enhancement Mode MOSFET 650V/12A; 175W	0 pcs on stock by special order von der Produktion zurückgezogen	3,2848200 PLN	1000 2000
209	HYE0573	Gehäuse: TO-220AB Temperatur: -55/+150°C		3,2848200 PLN	1000 2000
210	HMM02N60 HY Electronic	N-Channel Enhancement Mode MOSFET 600V/2A; 52W	0 pcs on stock by special order	0,5761600 PLN	800 80
210	HYE1098	Gehäuse: TO-251 Temperatur: -55/+150°C	0 pcs on stock by special order	0,5761600 PLN	800 80
211	HMN02N60 HY Electronic	N-Channel Enhancement Mode MOSFET 600V/2A; 52W	0 pcs on stock by special order	0,6204700 PLN	800 80
211	HYE1099	Gehäuse: TO-252 Temperatur: -55/+150°C	0 pcs on stock by special order	0,6204700 PLN	800 80
212	HMR05N60 HY Electronic	N-Channel Enhancement Mode MOSFET 600V/5A; 21.2W	0 pcs on stock by special order	1,1523000 PLN	1000 50
212	HYE1100	Gehäuse: TO-220AB Temperatur: -55/+150°C	0 pcs on stock by special order	1,1523000 PLN	1000 50
213	HMF05N60 HY Electronic	N-Channel Enhancement Mode MOSFET 600V/5A; 21.2W	0 pcs on stock by special order	1,1966300 PLN	1000 50
213	HYE1101	Gehäuse: TO-220F Temperatur: -55/+150°C	0 pcs on stock by special order	1,1966300 PLN	1000 50
214	HMR07N60 HY Electronic	N-Channel Enhancement Mode MOSFET 600V/7A; 23.1W	0 pcs on stock by special order	1,4625400 PLN	1000 50
214	HYE1102	Gehäuse: TO-220AB Temperatur: -55/+150°C	0 pcs on stock by special order	1,4625400 PLN	1000 50
215	HMF07N60 HY Electronic	N-Channel Enhancement Mode MOSFET 600V/7A; 23.1W	0 pcs on stock by special order	1,5068500 PLN	1000 50
215	HYE1103	Gehäuse: TO-220F Temperatur: -55/+150°C	0 pcs on stock by special order	1,5068500 PLN	1000 50
216	IRF9132 International Rectifier	Power Mosfet 100V/10A; 88W	0 pcs on stock by special order		1 0
216	IRF0004	Gehäuse: TO-3P Temperatur: -55/+150°C	0 pcs on stock by special order		1 0
217	IRFA1Z0 Samsung	MOS-FET N-Channel Enhanced 100V/0.5A	0 pcs on stock by special order		1 0
217	IRF0005	Gehäuse: TO-126 Temperatur: N/A	0 pcs on stock by special order		1 0
218	LBSS123LT1G LRC	Power N-MOSFET transistor 100V/0.17A; 225mW	0 pcs on stock by special order	0,0946670 PLN	30000 3000
218	LRC0017	Gehäuse: SOT-23 Temperatur: -55/+150°C	0 pcs on stock by special order	0,0946670 PLN	30000 3000
219	LBSS138LT1G LRC	Power N-MOSFET transistor 50V/200mA; 225mW	0 pcs on stock by special order	0,0765840 PLN	30000 3000
219	LRC0022	Gehäuse: SOT-23 Temperatur: -55/+150°C	0 pcs on stock by special order	0,0765840 PLN	30000 3000
220	L2N7002LT1G LRC	Small Signal N-Ch. MOSFET 60V/115mA; 225mW	0 pcs on stock by special order		30000 3000
220	LRC0328	Gehäuse: SOT-23 Temperatur: -55/+150°C	0 pcs on stock by special order		30000 3000
221	LP2305LT1G LRC	Enhancement-Mode P-Ch. MOSFET -30V/-4.2A; 1.4W	0 pcs on stock by special order		30000 3000
221	LRC0329	Gehäuse: SOT-23 Temperatur: -55/+150°C	0 pcs on stock by special order		30000 3000
222	LBSS84LT1G LRC	Power P-MOSFET transistor 50V/130mA; 225mW	0 pcs on stock		3000 3000
222	LRC0336	Gehäuse: SOT-23 Temperatur: -55/+150°C	0 pcs on stock		3000 3000
223	LBSS139LT1G LRC	Power N-MOSFET transistor 60V/200mA; 225mW	0 pcs on stock by special order		3000 3000
223	LRC0341	Gehäuse: SOT-23 Temperatur: -55/+150°C	0 pcs on stock by special order		3000 3000
224	LBSS139DW1T1G LRC	Power N-MOSFET transistor 60V/200mA; 380mW	0 pcs on stock by special order		3000 3000
224	LRC0342	Gehäuse: SOT-363 Temperatur: -55/+150°C	0 pcs on stock by special order		3000 3000
225	2N5486 Motorola	JFET N-Ch 25V Transistor	0 pcs on stock by special order		1 0
225	MOT0019	Gehäuse: TO-92 Temperatur: -65/+150°C	0 pcs on stock by special order		1 0

Resultate pro Seite Positionen 201 bis 225 aus 257 < 1 2 3 4 5 6 7 8 9 10 11 >

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Ropla Elektronik sp. z o.o., ul. Wrocławska 1C, 52-200 Suchy Dwór, Poland, NIP: 899-00-22-570, Regon 930272589
District Court Wrocław-Fabryczna, Business Register KRS 0000060925, Initial capital: 676 500,00 PLN.

Projekt compunet Polska, realisierung WRO-COM