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Índice Ropla HYE0652
Designación del fabricante HYG40P120H1S
Fabricante HY Electronic
Tarjeta de catálogo /hye/hyg40p120h1s.pdf hyg40p120h1s.pdf (1,38MB)

Grupo de mercancías IGBT modules
Fabricante HY Electronic
Mounting Style THT
Collector-Emitter Voltage VCES 1200V
Collector Current IC 40A
Power Dissipation PD 240W
Collector Emitter Saturation Voltage VCE(sat) 2.0V @35A
Input Capacitance Ciss 4.1nF
Tₘᵢₙ -40°C
Tₘₐₓ 175°C
Packaging Inner Box
Embalaje para varias unidades de mercancía -/8/- pcs
Peso 190.000000 g
Peso de embalaje para varias unidades de mercancía -/1.520 g/-
Número de tarifa aduanera 85411000
Bipolar Transistor with Isolated Gate (IGBT). Semiconductor power element used in power electronics converters with powers up to several hundred kilowatts.

• voltage controlled
• low loss of conduction and switching
• low saturation voltage (Vce sat)
• temperature sensor

Application
• motor drives
• UPS
• AC and DC drive amplifier
0 pcs on stock
by special order
ya no se fabrica

8 pcs Minimum order quantity
8 pcs Multiple
-/8/- pcs Embalaje para varias unidades de mercancía

pcs +  378,1008000 PLN