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Semiconductors
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Transistors
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MOS, FET Transistors
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Polarity
N-Channel (50)
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Drain-Source Voltage V
DS
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Continuous Drain Current
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Power Dissipation P
D
150mW (3)
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Drain-Source Resistance R
DS(on)
2.2mΩ (1)
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Input Capacitance C
iss
9.5pF (1)
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18pF (2)
20pF (1)
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26pF (1)
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13113pF (1)
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Tₘᵢₙ
-55°C (69)
-50°C (10)
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Tₘₐₓ
150°C (73)
155°C (2)
175°C (4)
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Packaging
Reel 7" (18)
Tape on Reel (52)
Tube (7)
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