N-Channel Enhancement Mode MOSFET 600V/5A; 21.2W

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Index Ropla HYE1101
Herstellerkennzeichnung HMF05N60
Hersteller HY Electronic
Katalogkarte /hye/hmr05n60_hmf05n60.pdf hmr05n60_hmf05n60.pdf (355,93KB)
Warengruppe MOS, FET Transistors
Hersteller HY Electronic
Mounting Style THT
Package/Case TO-220F
Transistor Type MOSFET
Polarity N-Channel
Drain-Source Voltage VDS 600V
Continuous Drain Current 5.0A
Power Dissipation PD 21.2W
Drain-Source Resistance RDS(on) 1.7Ω
Input Capacitance Ciss 547pF
Tₘᵢₙ -55°C
Tₘₐₓ 150°C
Packaging Tube
Sammelverpackung 50/8.000/- pcs
Zolltarifnummer 85411000
FEATURES
●Fast Swithing
●Low Gate Charge & Low Crss
●Fully Characterized Avalanche Voltage and Current
●Specially Designed for AC Adapter, Battery Charger and SMPS

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Quantity

1.000 pcs Minimum order quantity
50 pcs Multiple
50/8.000/- pcs Sammelverpackung

Nettopreis / pcs

pcs +  1,3329400 PLN