N-Channel Enhancement Mode MOSFET 600V/5A; 21.2W

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Índice Ropla HYE1101
Designación del fabricante HMF05N60
Fabricante HY Electronic
Tarjeta de catálogo /hye/hmr05n60_hmf05n60.pdf hmr05n60_hmf05n60.pdf (355,93KB)
Grupo de mercancías MOS, FET Transistors
Fabricante HY Electronic
Mounting Style THT
Package/Case TO-220F
Transistor Type MOSFET
Polarity N-Channel
Drain-Source Voltage VDS 600V
Continuous Drain Current 5.0A
Power Dissipation PD 21.2W
Drain-Source Resistance RDS(on) 1.7Ω
Input Capacitance Ciss 547pF
Tₘᵢₙ -55°C
Tₘₐₓ 150°C
Packaging Tube
Embalaje para varias unidades de mercancía 50/8.000/- pcs
Número de tarifa aduanera 85411000
FEATURES
●Fast Swithing
●Low Gate Charge & Low Crss
●Fully Characterized Avalanche Voltage and Current
●Specially Designed for AC Adapter, Battery Charger and SMPS

Estado

0 pcs on stock
by special order

Quantity

1.000 pcs Minimum order quantity
50 pcs Multiple
50/8.000/- pcs Embalaje para varias unidades de mercancía

Precio neto / pcs

pcs +  1,3329400 PLN